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ZXMN10A08E6
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
?
?
?
?
?
?
0.5
100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 100V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
2.0
?
?
?
?
?
?
5.0
0.87
27
32
4.0
0.25
0.30
?
0.95
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 3.2A
V GS = 6V, I D = 2.6A
V DS = 15V, I D = 3.2A
I S = 3.2A, V GS = 0V
I S = 1.2A, di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
C iss
C oss
C rss
Q g
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
?
?
405
28.2
14.2
4.2
7.7
1.8
2.1
3.4
2.2
8
3.2
?
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 50V, V GS = 0V
f = 1MHz
V GS = 5V, V DS = 50V
I D = 1.2A
V GS = 10V, V DS = 50V
I D = 1.2A
V DD = 30V, V GS = 10V
I D = 1.2A, R G ? 6.0 Ω
Notes:
8. Measured under pulsed conditions. Width 300 μ s. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
3 of 7
www.diodes.com
March 2012
? Diodes Incorporated
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